STF32N65M5 データシートの表示（PDF） - STMicroelectronics

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STF32N65M5

N-channel 650 V, 0.095 Ω, 24 A, MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220FP, TO-220, TO-247

STMicroelectronics 

STB/F/I/P/W32N65M5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

TO-220, D²PAK

TO-247, I²PAK

TO-220FP

VGS

ID

ID

IDM (2)

PTOT

IAR

EAS

dv/dt (3)

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;TC=25 °C)

Tstg Storage temperature

Tj Max. operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 24 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS

± 25

24

24(1)

15

15 (1)

96

96 (1)

150

35

8

650

15

2500

- 55 to 150

150

Unit

V

A

A

A

W

A

mJ

V/ns

V

°C

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D²PAK TO-220FP I²PAK TO-220 TO-247

Rthj-case

Thermal resistance junction-

case max

Rthj-amb

Thermal resistance junction-

ambient max

Rthj-pcb

Thermal resistance junction-pcb

max

0.83

30

3.6

62.5

0.83

°C/W

50 °C/W

°C/W

Tl

Maximum lead temperature for

soldering purpose

300

°C

Doc ID 15316 Rev 4

3/22

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