STF32N65M5 データシートの表示（PDF） - STMicroelectronics

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STF32N65M5

N-channel 650 V, 0.095 Ω, 24 A, MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220FP, TO-220, TO-247

STMicroelectronics 

STB/F/I/P/W32N65M5

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(off)

tr

tc

tf

Turn-off delay time

Rise time

Cross time

Fall time

Test conditions

VDD = 400 V, ID = 15 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 21)

Min. Typ. Max. Unit

53

ns

12

ns

-

-

29

ns

16

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 24 A, VGS = 0

-

24 A

96 A

1.5 V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 24 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 21)

-

375

6

33

ns

µC

A

trr

Reverse recovery time

ISD = 24 A, di/dt = 100 A/µs

440

ns

Qrr Reverse recovery charge

VDD = 60 V, Tj = 150 °C

-

8

µC

IRRM Reverse recovery current

(see Figure 21)

36

A

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Doc ID 15316 Rev 4

5/22

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