Philips Semiconductors
NPN general purpose transistor
Product specification
2PC4617J
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air; note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
MAX.
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PC4617QJ
2PC4617RJ
2PC4617SJ
collector-emitter saturation
voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 6 V; note 1
IC = 50 mA; IB = 5 mA; note 1
MIN.
−
−
−
MAX.
100
5
100
UNIT
nA
µA
nA
120
270
180
390
270
560
−
200
mV
IE = ie = 0; VCB = 12 V; f = 1 MHz −
1.5
IC = 2 mA; VCE = 12 V; f = 100 MHz; 100
−
note 1
pF
MHz
2001 Aug 03
3