2SB09700RL データシートの表示（PDF） - Panasonic Corporation
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2SB09700RL Datasheet PDF : 3 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0970 (2SB970)
Silicon PNP epitaxial planar type
For low-voltage output amplification
■ Features
/ • Low collector-emitter saturation voltage VCE(sat)
• Mini type package, allowing downsizing of the equipment and
e automatic insertion through the tape packing and the magazine
e. packing
nc d le stag ■ Absolute Maximum Ratings Ta = 25°C
yc Parameter
Symbol Rating
Unit
a e lifec Collector-base voltage (Emitter open) VCBO
−15
V
t Collector-emitter voltage (Base open) VCEO
−10
V
n u uc Emitter-base voltage (Collector open) VEBO
−7
V
rod Collector current
IC
− 0.5
A
te tin r P Peakcollectorcurrent
ICP
−1
A
fou . Collector power dissipation
PC
200
mW
ing type tion Junction temperature
Tj
150
°C
w e a Storage temperature
Tstg −55 to +150 °C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 1R
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
ain onludes faoilnlotenanncce tyupeed typpeed test info.rjpm/en/ ■ Electrical Characteristics Ta = 25°C ± 3°C
inc m na tin ty la .co Parameter
Symbol
Conditions
Min Typ Max Unit
c ed ned inte on ed ut nic Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−15
V
M is tinu pla ma disc tinu bo so Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−10
V
n L a na Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−7
V
iscon laned isco UR .pa Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0
−100 nA
d g on Forward current transfer ratio *1
hFE1 *2 VCE = −2 V, IC = − 0.5 A
130
350
e/D p win mic hFE2 VCE = −2 V, IC = −1 A
60
Danc follo .se Collector-emitter saturation voltage *1 VCE(sat) IC = − 0.4 A, IB = −8 mA
− 0.16 − 0.30 V
n it w Base-emitter saturation voltage *1
VBE(sat) IC = − 0.4 A, IB = −8 mA
− 0.8 −1.2
V
ainte e vis ://ww Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
130
MHz
Collector output capacitance
M as ttp (Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
22
pF
Ple h Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
130 to 220 180 to 350
Publication date: March 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00063BED
1
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