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2N06L50 データシートの表示(PDF) - Infineon Technologies
部品番号
コンポーネント説明
メーカー
2N06L50
OptiMOS® Power-Transistor
Infineon Technologies
2N06L50 Datasheet PDF : 9 Pages
1
2
3
4
5
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7
8
9
IPG20N06S2L-50
1 Power dissipation
P
tot
= f(
T
C
);
V
GS
≥
6 V; one channel active
2 Drain current
I
D
= f(
T
C
);
V
GS
≥
6 V; one channel active
60
25
50
20
40
15
30
10
20
5
10
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25°C;
D
=0; one channel active
parameter:
t
p
100
1 µs
4 Max. transient thermal impedance
Z
thJC
= f(
t
p
)
parameter:
D
=
t
p
/
T
10
1
10 µs
0.5
10
0
100 µs
10
0.1
0.05
1 ms
10
-1
0.01
single pulse
1
1
Rev. 1.0
10
V
DS
[V]
10
-2
100
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[s]
page 4
2009-09-07
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