SS8P3L(2019) データシートの表示（PDF） - Vishay Semiconductors

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SS8P3L
(Rev.:2019)

High Current Density Surface Mount Schottky Barrier Rectifiers

Vishay Semiconductors 

www.vishay.com

SS8P2L, SS8P3L

Vishay General Semiconductor

High Current Density Surface Mount

Schottky Barrier Rectifiers

eSMP ® Series

K

1

2

SMPC (TO-277A)

K

Cathode

Anode 1

Anode 2

DESIGN SUPPORT TOOLS click logo to get started

Models

Available

PRIMARY CHARACTERISTICS

IF(AV)

VRRM

IFSM

EAS

VF at IF = 8.0 A

TJ max.

Package

8.0 A

20 V, 30 V

150 A

20 mJ

0.472 V

150 °C

SMPC (TO-277A)

Circuit configuration

Single

FEATURES

• Very low profile - typical height of 1.1 mm

Available

• Ideal for automated placement

• Low forward voltage drop

• Low power loss, high efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

MECHANICAL DATA

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

Base P/NHM3_X - halogen-free, RoHS-compliant and

AEC-Q101 qualified 

(“_X” denotes revision code e.g. A, B,.....)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

VRRM

IF(AV)

IFSM

Non-repetitive avalanche energy at IAS = 2 A, TJ = 25 °C

Operating junction and storage temperature range

EAS

TJ, TSTG

SS8P2L

SS8P3L

S82

S83

20

30

8.0

150

20

-55 to +150

UNIT

V

A

mJ

°C

Revision: 29-Jan-2019

1

Document Number: 89001

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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