FSBB10CH120DF データシートの表示（PDF） - ON Semiconductor

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FSBB10CH120DF

Motion SPM® 3 Series

ON Semiconductor 

Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)

Inverter Part

Symbol

Parameter

Conditions

VPN

VPN(Surge)

VCES

± IC

± ICP

Supply Voltage

Supply Voltage (Surge)

Collector - Emitter Voltage

Each IGBT Collector Current

Each IGBT Collector Current (Peak)

Applied between P - NU, NV, NW

Applied between P - NU, NV, NW

TC = 25°C, TJ 150°C (Note 4)

TC = 25°C, TJ  150°C, Under 1 ms Pulse

Width (Note 4)

PC

Collector Dissipation

TJ

Operating Junction Temperature

TC = 25°C per One Chip (Note 4)

Rating

900

1000

1200

10

20

69

-40 ~ 150

Unit

V

V

V

A

A

W

°C

Control Part

Symbol

Parameter

VCC

Control Supply Voltage

VBS

High-Side Control Bias Voltage

VIN

Input Signal Voltage

VFO

Fault Output Supply Voltage

IFO

Fault Output Current

VSC

Current Sensing Input Voltage

Conditions

Applied between VCC(H), VCC(L) - COM

Applied between VB(U) - VS(U), VB(V) - VS(V),

VB(W) - VS(W)

Applied between IN(UH), IN(VH), IN(WH),

IN(UL), IN(VL), IN(WL) - COM

Applied between VFO - COM

Sink Current at VFO pin

Applied between CSC - COM

Rating

20

20

-0.3 ~ VCC+0.3

-0.3 ~ VCC+0.3

2

-0.3 ~ VCC+0.3

Unit

V

V

V

V

mA

V

Total System

Symbol

Parameter

VPN(PROT) Self Protection Supply Voltage Limit

(Short Circuit Protection Capability)

TC

TSTG

VISO

Module Case Operation Temperature

Storage Temperature

Isolation Voltage

Conditions

VCC = VBS = 13.5 ~ 16.5 V, TJ = 150°C,

Non-repetitive, < 2 s

See Figure 2

60 Hz, Sinusoidal, AC 1 minute, Connection

Pins to Heat Sink Plate

Rating

800

-40 ~ 125

-40 ~ 125

2500

Unit

V

°C

°C

Vrms

Thermal Resistance

Symbol

Parameter

Conditions

Min.

Rth(j-c)Q

Rth(j-c)F

Junction to Case Thermal Resistance

(Note 5)

Inverter IGBT part (per 1 / 6 module) -

Inverter FWD part (per 1 / 6 module) -

Note:

4. These values had been made an acquisition by the calculation considered to design factor.

5. For the measurement point of case temperature (TC), please refer to Figure 2.

Typ.

-

-

Max.

1.80

2.75

Unit

°C / W

°C / W

©2015 Fairchild Semiconductor Corporation

5

FSBB10CH120DF Rev. 1.1

www.fairchildsemi.com

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