STF5NK100Z(2006) データシートの表示（PDF） - STMicroelectronics

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STF5NK100Z
(Rev.:2006)

N-channel 1000V - 2.7Ω - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STP5NK100Z - STF5NK100Z - STW5NK100Z

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 3.5 A, VGS=0

ISD= 3.5 A,

di/dt = 100A/µs,

VDD=30 V

(see Figure 22)

ISD= 3.5 A,

di/dt = 100A/µs,

VDD=35 V, Tj=150°C

(see Figure 22)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

3.5 A

14 A

1.6 V

605

ns

3.09

µC

10.5

A

742

ns

4.2

µC

11.2

A

6/16

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