STK554U392AGEVB データシートの表示（PDF） - ON Semiconductor
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STK554U392AGEVB Datasheet PDF : 16 Pages
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Ordering number : ENA2244A
STK554U392A-E
Thick-Film Hybrid IC
Inverter Power H-IC
for 3-phase Motor Drive
http://onsemi.com
Overview
This “Inverter Power H-IC” is highly integrated device containing all High Voltage (HV) control from HV-DC to
3-phase outputs in a single small SIP module. Output stage uses IGBT/FRD technology and implements Under Voltage
Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal Boost diodes are
provided for high side gate boost drive.
Function
Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit
All control inputs and status outputs are at low voltage levels directly compatible with microcontrollers.
A single power supply drive is enabled through the use of bootstrap circuits for upper power supplies
Built-in dead-time for shoot-thru protection
Having open emitter output for low side IGBTs; individual shunt resistor per phase for OCP
Externally accessible embedded thermistor for substrate temperature measurement
Shutdown function ‘ITRIP’ to disable all operations of the 6 phase output stage by external input
Certification
UL1557 (File number: E339285).
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Remarks
Supply voltage
VCC
V+ to U-, V-, W-, surge<500V
*1
Collector-emitter voltage
VCE
V+ to U, V, W or U, V, W, to U-, V-, W-
Output current
V+,U-,V-,W-,U,V,W terminal current
Io
V+,U-,V-,W-,U,V,W terminal current, Tc=100C
Output peak current
Iop
V+,U-,V-,W-,U,V,W terminal current, P.W.=1ms
Pre-driver voltage
VD1,2,3,4
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
*2
Input signal voltage
VIN
HIN1, 2, 3, LIN1, 2, 3
FLTEN terminal voltage
VFLTEN
FLTEN terminal
Maximum power dissipation
Pd
IGBT per 1 channel
Junction temperature
Tj
IGBT, FRD, Pre-Driver IC
Storage temperature
Tstg
Operating case
temperature
Tc
H-IC case
Tightening torque
A screw part
*3
Withstand voltage
Vis
50Hz sine wave AC 1 minute *4
Ratings
450
600
±15
±8
±30
20
0.3 to VDD
0.3 to VDD
35
150
40 to +125
40 to +100
0.9
2000
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between + and U-(V-, W-) terminal.
*2: VD1=VB1 to U, VD2=VB2 to V, VD3=VB3 to W, VD4=VDD to VSS terminal voltage.
*3: Flatness of the heat-sink should be less than 50m to +100m.
*4: Test conditions : AC2500V, 1 second
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
Semiconductor Components Industries, LLC, 2013
December, 2013 Ver. 131209DS
D1913HK 018-13-0051/N0613HK No.A2244-1/15
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