STK581U3C2D データシートの表示（PDF） - ON Semiconductor

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STK581U3C2D

Intelligent Power Module (IPM) 600 V, 30 A

ON Semiconductor 

Intelligent Power Module

(IPM)

600 V, 30 A

STK581U3C2D-E

Overview

This “Inverter IPM” is highly integrated device containing all High

Voltage (HV) control from HV−DC to 3−phase outputs in a single SIP

module (Single−In line Package). Output stage uses IGBT/FRD

technology and implements Under Voltage Protection (UVP) and

Over Current Protection (OCP) with a Fault Detection output flag.

Internal Boost diodes are provided for high side gate boost drive.

Features

• Single Control Power Supply due to Internal Bootstrap Circuit for

High Side Pre−driver Circuit

• All Control Input and Status Output are at Low Voltage Levels

directly compatible with Microcontrollers

• Built−in Cross Conduction Prevention

• Externally accessible Embedded Thermistor for Substrate

Temperature Measurement

• The Level of the Over−current Protection Current is adjustable with

the External Resistor, “RSD”

• These Devices are Pb−Free and are RoHS Compliant

Certification

• UL1557 (File number : E339285)

www.onsemi.com

SIP22 70x31.1

CASE 127BU

MARKING DIAGRAM

STK581U3C2D

ABCDD

STK581U3C2D = Specific Device Code

A

= Year

B

= Month

C

= Production Site

DD

= Factory Lot code

Device marking is on package underside

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 13 of this data sheet.

© Semiconductor Components Industries, LLC, 2016

1

April, 2020 − Rev. 2

Publication Order Number:

STK581U3C2D−E/D

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