STK581U3C2D データシートの表示（PDF） - ON Semiconductor
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STK581U3C2D Datasheet PDF : 15 Pages
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STK581U3C2D−E
Specifications
ABSOLUTE MAXIMUM RATINGS (at Tc = 25°C)
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage
Collector−emitter voltage
Output current
VCC
P to N, surge < 500 V (Note 1)
VCE
P to U,V,W or U,V,W to N
Io
P, N, U,V,W terminal current
450
V
600
V
±30
A
P, N, U,V,W terminal current at Tc = 100°C
±15
A
Output peak current
Iop
P, N, U,V,W terminal current for a Pulse width of 1 ms
±45
A
Pre−driver voltage
Input signal voltage
FAULT terminal voltage
Maximum power dissipation
VD1,2,3,4
VIN
VFAULT
Pd
VB1 to U, VB2 to V, VB3 to W, VDD to VSS (Note 2)
HIN1, 2, 3, LIN1, 2, 3
FAULT terminal
IGBT per channel
20
V
−0.3 to VDD
V
−0.3 to VDD
V
49
W
Junction temperature
Tj
IGBT, FRD
150
°C
Storage temperature
Tstg
−40 to +125
°C
Operating case temperature
Tc
IPM case temperature
−40 to +100
°C
Tightening torque
Case mounting screws (Note 3)
1.17
Nm
Withstand voltage
Vis
50 Hz sine wave AC 1 minute (Note 4)
2000
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: Reference voltage is “VSS” terminal voltage unless otherwise specified.
1. Surge voltage developed by the switching operation due to the wiring inductance between “P” and “N” terminal.
2. Terminal voltage : VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS
3. Flatness of the heat−sink should be 0.15 mm and below.
4. Test conditions : AC 2500 V, 1 s.
ELECTRICAL CHARACTERISTICS (at Tc = 25_C, VD1, VD2, VD3, VD4 = 15 V, VCC = 300 V, L = 3.5 mH)
Parameter
Symbol
Conditions
Test
Circuit Min
Typ
Power Output Section
Collector−emitter cut−off current
Bootstrap diode reverse current
ICE
IR(BD)
VCE = 600 V
VR(BD)
Fig.1
−
−
−
−
Collector to emitter
saturation voltage
VCE(SAT) Ic = 30 A
Upper side
Fig.2
−
1.8
Tj = 25°C
Lower side
−
2.1
(Note 5)
Ic = 15 A
Tj = 100°C
Upper side
Lower side
(Note 5)
−
1.5
−
1.7
Diode forward voltage
VF
IF = 30 A
Upper side
Fig.3
−
2.0
Tj = 25°C
Lower side
(Note 5)
−
2.3
IF = 15 A
Tj = 100°C
Upper side
Lower side
(Note 5)
−
1.5
−
1.7
Junction to case
thermal resistance
qj−c(T)
qj−c(D)
IGBT
FRD
−
−
−
−
Control (Pre−driver) Section
Pre−driver power dissipation
ID
VD1, 2, 3 = 15 V
Fig.4
−
0.08
VD4 = 15 V
−
1.6
Max
Unit
0.1
mA
0.1
mA
2.7
V
3.0
−
−
2.9
V
3.2
−
−
2.5
°C/W
3
0.4
mA
4
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