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UBA20262 データシートの表示(PDF) - NXP Semiconductors.

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UBA20262 Datasheet PDF : 32 Pages
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NXP Semiconductors
UBA20261/2
600 V and 350 V power IC for step dimmable CFLs
voltage
(V)
5V
Vth(CP)max
1st failed
VCP
ignition
attempt
Vth(CP)min
Vth(rel)CP
startup
time
1st preheat
time
tph
ten(ign)
1st ignition
enabling time
HOLD STATE
td(restart)
restart
delay time
2nd failed
ignition
attempt
discharge
to 0 V
2nd preheat
time
tph
ten(ign)
POWER DOWN STATE
2nd
startup
2nd ignition
enabling time
0V
Fig 5. Retry cycle
time (s)
001aan537
7.1.5 Boost state and transition to burn state
When ignition is detected, by measuring lamp current on the CSI pin, the circuit enters the
boost state. Figure 7 shows the boost and burn state in more detail. In the boost state, the
nominal burn state lamp current can be increased with a fixed boost ratio of 1.5 : 1. This
ratio boosts the slow luminescence increase of a cold amalgam CFL lamp, provided the
IC is in the DIM_1 mode. If the IC is at a temperature (Tj(bp)bst) before entering the boost
state, the burn state is bypassed.
A boost timing circuit is included to determine the boost time and transition to burn time.
The circuit consists of a clock generator comprising CCB, Rext(RREF) and a 64-step counter.
When the timer is not operating, CCB is discharged below the Vth(CB)min level of 1.1 V. This
voltage, approximately 0.6 V, is still higher than the level at which the comparator on CCB
detects if the CB pin is shorted to ground.
The boost time consists of 63 saw-tooth pulses on the CB pin, automatically followed by
the transition time at the CP pin. The 32 saw-tooth pulses form the transition time from
boost to burn and enables a smooth transition between the current controlled boost and
burn state. The total transition time is approximately four times the preheat time (see
Figure 6).
UBA20261_UBA20262
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 10 October 2011
© NXP B.V. 2011. All rights reserved.
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