7N60 データシートの表示（PDF） - Unspecified

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7N60

600V N-Channel MOSFET

Unspecified 

600V N-Channel MOSFET

GENERAL DESCRIPTION

This Power MOSFET is produced using

advanced planar stripe DMOS technology.

This latest technology has been especially

designed to minimize on-state resistance,

Have a high rugged avalanche

characteristics.These devices are well suited

for high efficiency switched mode power

supplies, active power factor

correction.electronic lamp ballasts based on

half bridge topology.

7N60/7N60F

VDSS RDS(ON)

ID

600V

1.3Ω

7A

Features

• 7A, 600V, RDS(on) = 1.3Ω @VGS = 10 V

• Low gate charge ( typical 29nC)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Ordering Information

PART NUMBER PACKAGE BRAND

7N60/7N60F TO-220/220F 0GFD

www.goford.cn TEL：0755-86350980 FAX：0755-86350963

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