74HC2G17-Q100 データシートの表示（PDF） - NXP Semiconductors.
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74HC2G17-Q100 Datasheet PDF : 19 Pages
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Nexperia
74HC2G17-Q100; 74HCT2G17-Q100
Dual non-inverting Schmitt trigger
Table 8. Static characteristics for 74HCT2G17 …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 40 C to +125 C
VOH
HIGH-level output voltage
VI = VT+ or VT; VCC = 4.5 V
IO = 20 A
IO = 4.0 mA
4.4
-
-
V
3.7
-
-
V
VOL
LOW-level output voltage VI = VT+ or VT; VCC = 4.5 V
IO = 20 A
-
-
0.1
V
IO = 4.0 mA
-
-
0.4
V
II
input leakage current
VI = GND or VCC; VCC = 5.5 V
-
-
1.0
A
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 5.5 V
-
-
20.0
A
ICC
additional supply current
VI = VCC 2.1 V;
VCC = 4.5 V to 5.5 V; IO = 0 A
-
-
410
A
12. Dynamic characteristics
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter
Conditions
25 C
Min Typ Max
74HC2G17-Q100
tpd
propagation delay
tt
transition time
CPD
power dissipation
capacitance
nA to nY; see Figure 5
VCC = 2.0 V; CL = 50 pF
VCC = 4.5 V; CL = 50 pF
VCC = 6.0 V; CL = 50 pF
nY; see Figure 5
VCC = 2.0 V; CL = 50 pF
VCC = 4.5 V; CL = 50 pF
VCC = 6.0 V; CL = 50 pF
VI = GND to VCC
[1]
-
-
-
[2]
-
-
-
[3] -
36 115
12 22
10 18
20 75
7 15
5 13
10 -
40 C to +125 C Unit
Min Max
Max
(85 C) (125 C)
-
140
175 ns
-
27
34 ns
-
22
28 ns
-
95
110 ns
-
19
22 ns
-
16
19 ns
-
-
- pF
74HC_HCT2G17_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 May 2013
© Nexperia B.V. 2017. All rights reserved
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