DALC208(1999) データシートの表示（PDF） - STMicroelectronics
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DALC208 Datasheet PDF : 10 Pages
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PSPICE MODEL
Fig. A11: PSpice model of one DALC208SC6 cell.
Vref2
0.8nH 0.3Ω
I/O
0.8nH
0.3Ω
Dpos
Dneg
0.5Ω
1.45nH
Vref1
Figure A11 shows the PSpice model of one
DALC208SC6 cell. In this model, the diodes are
defined by the PSpice parameters given in table
below (Fig A12).
Fig. A12: PSpice parameters.
BV
CJO
IBV
IKF
IS
ISR
M
N
NR
RS
VJ
DPOS
9
7p
1u
28.357E-3
118.78E-15
100E-12
0.3333
1.3334
2
0.68377
0.6
DNEG
9
7p
1u
1000
5.6524E-9
472.3E-9
0.3333
2.413
2
0.71677
0.6
Note: This simulation model is available only for an ambient tem-
perature of 27°C.
The simulations done (Fig. A13, A14, A15) shows
that the PSpice model is close to the product
behavior.
DALC208SC6
Fig. A13a: PSpice model simulation: surge > 0
IEC 1000-4-2 contact discharge response.
Current (A) / Voltage (V)
60
50
40
30
Current
Surge
I/O
Voltage
20
10
0
0
50
100
t(ns)
Fig. A13b: PSpice model simulation: surge < 0
IEC 1000-4-2 contact discharge response.
Current (A) / Voltage (V)
0
-10
-20
Current
Surge
I/O
Voltage
-30
-40
-50
0
50
100
t(ns)
Fig. A14: Attenuation comparison.
dBm
0
-10
Measured
PSpice
-20
-30
1
10
100
f(MHz)
1,000
9/10
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