S34ML01G200BFI000(2012) データシートの表示（PDF） - Spansion Inc.

部品番号

コンポーネント説明

メーカー

S34ML01G200BFI000
(Rev.:2012)

Spansion® SLC NAND Flash Memory for Embedded

Spansion Inc. 

Data Sheet (Advance Information)

3.8 Special Read for Copy Back — S34ML02G2 and S34ML04G2

The device features the “Special Read for Copy Back.” If Copy Back Read (described in Section 3.6 and

Section 3.7 on page 20) is triggered with confirm command ‘36h’ instead ‘35h’, Copy Back Read from target

page(s) will be executed with an increased internal (VPASS) voltage.

This special feature is used in order to minimize the number of read errors due to over-program or read

disturb — it shall be used only if ECC read errors have occurred in the source page using Page Read or Copy

Back Read sequences.

Excluding the Copy Back Read confirm command, all other features described in Section 3.6 and Section 3.7

for standard copy back remain valid (including the figures referred to in those sections).

3.9

Read Status Register

The Status Register is used to retrieve the status value for the last operation issued. After writing 70h

command to the command register, a read cycle outputs the content of the Status Register to the I/O pins on

the falling edge of CE# or RE#, whichever occurs last. This two-line control allows the system to poll the

progress of each device in multiple memory connections even when R/B# pins are common-wired. Refer to

Section 3.2 on page 22 for specific Status Register definition, and to Figure 6.22 on page 49 and Figure 6.24

on page 50 for timings.

If the Read Status Register command is issued during multiplane operations then Status Register polling will

return the combined status value related to the outcome of the operation in the two planes according to the

following table:

Status Register Bit

Bit 0, Pass/Fail

Bit 1, Cache Pass/Fail

Composite Status Value

OR

OR

In other words, the Status Register is dynamic; the user is not required to toggle RE# / CE# to update it.

The command register remains in Status Read mode until further commands are issued. Therefore, if the

Status Register is read during a random read cycle, the read command (00h) should be given before starting

read cycles.

3.10

Read Status Enhanced — S34ML02G2 and S34ML04G2

Read Status Enhanced is an additional feature used to retrieve the status value for a previous operation in

the case of multiplane operations on a specific plane in the same die.

Figure 6.25 on page 50 defines the Read Status Enhanced behavior and timings. The plane and die address

must be specified in the command sequence in order to retrieve the status of the die and the plane of interest.

Refer to Table 3.2 for specific Status Register definitions. The command register remains in Status Read

mode until further commands are issued.

The Status Register is dynamic; the user is not required to toggle RE# / CE# to update it.

3.11

Read Status Register Field Definition

Table 3.2 below lists the meaning of each bit of the Read Status Register and Read Status Enhanced

(S34ML02G2 and S34ML04G2).

August 3, 2012 S34ML01G2_04G2_01

Spansion® SLC NAND Flash Memory for Embedded

21

Share Link: