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1N5820(2006) データシートの表示(PDF) - ON Semiconductor

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1N5820 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
Extremely Low VF
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
Shipped in plastic bags, 500 per bag
Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to
the part number
Pb−Free Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
MARKING DIAGRAM
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 9
A
1N
582x
YYWWG
G
A
= Assembly Location
1N582x = Device Code
x
= 0, 1, or 2
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
1N5820/D

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