FQP27N25 データシートの表示（PDF） - Fairchild Semiconductor
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FQP27N25 Datasheet PDF : 8 Pages
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Typical Characteristics
102
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
101
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.5
0.4
VGS = 10V
0.3
VGS = 20V
0.2
0.1
※ Note : TJ = 25℃
0.0
0
30
60
90
120
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4000
3200
2400
1600
800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
※ Notes :
1. VGS = 0 V
Crss
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
150℃
10-1
0.2 0.4
25℃
※ Note :
1. VGS = 0V
2. 250μ s Pulse Test
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
VDS = 50V
10
VDS = 125V
VDS = 200V
8
6
4
2
※ Note : ID = 27 A
0
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor Corporation
3
FQP27N25 Rev. C1
www.fairchildsemi.com
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