2SA1050 データシートの表示（PDF） - New Jersey Semiconductor
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2SA1050 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
lc=-1mA; IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
lE=-1mA; lc= 0
vCE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB=-0.5A
ICBO
Collector Cutoff Current
VCB=-140V; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V;lc= 0
HFE
DC Current Gain
lc=-1A;VCE=-5V
fi
Current-Gain—Bandwidth Product
k^-IA^cE^-lOV
hFE Classifications
R
0
Y
55-110 80-160 120-240
2SA1050
MIN TYP. MAX UNIT
-140
V
-140
V
-5
V
-2.0 V
-10 U A
-10 U A
55
240
70
MHz
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