CLY2 データシートの表示（PDF） - TriQuint Semiconductor

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CLY2

High-Power Packaged GaAs FET

TriQuint Semiconductor 

CLY2 Datasheet

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain-source voltage

VDS

9

V

Drain-gate voltage

VDG

12

V

Gate-source voltage

VGS

-6

V

Drain current

ID

600

mA

Channel temperature

TCh

150

°C

Storage temperature

Tstg

-55...+150

°C

Total power dissipation (Ts < 50 °C) 1)

Ptot

900

mW

Thermal Resistance

Channel-soldering point 1)

RthChS

≤110

K/W

1)Ts: Temperature at soldering point

Electrical Characteristics

(TA = 25°C , unless otherwise specified)

Parameter

Symbol

Drain-source saturation current

VDS = 3 V VGS = 0 V

Drain-source pinch-off current

VDS = 3 V VGS = -3.8 V

Gate pinch-off current

VDS = 3 V VGS = -3.8 V

Pinch-off Voltage

VDS= 3 V ID=50µA

Small Signal Gain*)

VDS = 5 V ID = 180 mA

Pin = -5 dBm

Small Signal Gain*)

f = 1.8 GHz

VDS = 3 V ID = 180 mA

Pin = -5 dBm

Output Power

f = 1.8 GHz

VDS = 3 V ID = 180 mA f = 1.8 GHz

Pin = 10 dBm

IDSS

ID

IG

VGS(p)

G

G

Po

min

300

-

-

-3.8

-

-

22.5

typ

450

5

5

-2.8

15.5

14.5

23.5

max

650

50

20

-1.8

-

-

-

Unit

mA

µA

µA

V

dB

dB

dBm

For additional information and latest specifications, see our website: www.triquint.com

3

Revision C, December 14, 2005

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