IRFP150A データシートの表示（PDF） - Fairchild Semiconductor
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IRFP150A Datasheet PDF : 7 Pages
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IRFP150A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
∆BV/ ∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage 100 -- -- V VGS=0V,ID=250 µA
Breakdown Voltage Temp. Coeff. -- 0.11 -- V/ ΟC ID=250µA See Fig 7
Gate Threshold Voltage
2.0 -- 4.0 V VDS=5V,ID=250 µA
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
-- -- 10
VDS=100V
Drain-to-Source Leakage Current -- -- 100 µ A VDS=80V,TC=150ΟC
Static Drain-Source
On-State Resistance
-- -- 0.04 Ω VGS=10V,ID=21.5A O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 28.34 --
Ω VDS=40V,ID=21.5A
O4
-- 1750 2270
-- 420 485 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 185 215
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 17 50
-- 20 50
VDD=50V,ID=40A,
-- 80 160 ns RG=6.2Ω
See Fig 13
-- 45 100
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 75 97
-- 13.2 --
-- 34.8 --
VDS=80V,VGS=10V,
nC ID=40A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 43
Integral reverse pn-diode
A
-- 170
in the MOSFET
O4 -- -- 1.6 V TJ=25ΟC,IS=43A,VGS=0V
-- 135 -- ns TJ=25ΟC ,IF=40A
-- 0.65 -- µC diF/dt=100A/ µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=0.6mH, IAS=43A, VDD=25V, RG=27Ω , Starting TJ =25oC
O3 ISD <_ 40A, di/dt <_ 470A/µs, VDD<_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature
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