BF569R データシートの表示（PDF） - Vishay Semiconductors

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BF569R

Silicon PNP Planar RF Transistor

Vishay Semiconductors 

Silicon PNP Planar RF Transistor

BF569/BF569R

Vishay Telefunken

Electrostatic sensitive device.

Observe precautions for handling.

Applications

For selfoscillating RF mixer stages.

Features

D High gain

D Low noise

1

1

94 9280

2

3

13 581

BF569 Marking: LH

Plastic case (SOT 23)

1 = Collector, 2 = Base, 3 = Emitter

9510527

3

2

13 581

BF569R Marking: LM

Plastic case (SOT 23)

1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Tamb ≤ 60 °C

Storage temperature range

Symbol

Value

Unit

–VCBO

40

V

–VCEO

35

V

–VEBO

3

V

–IC

30

mA

Ptot

200

mW

Tj

150

°C

Tstg

–65 to +150 °C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3

RthJA

450

K/W

plated with 35mm Cu

Document Number 85000

Rev. 3, 20-Jan-99

www.vishay.de • FaxBack +1-408-970-5600

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