Q67000-S306 データシートの表示（PDF） - Infineon Technologies

部品番号

コンポーネント説明

メーカー

Q67000-S306

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Rev. 1.0

BSP123

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - soldering point

(Pin 4)

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

Symbol

Values

Unit

min. typ. max.

RthJS

RthJA

-

15 25 K/W

- 100 115

-

51 70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

Gate threshold voltage, VGS = VDS

ID=50µA

Zero gate voltage drain current

VDS=100V, VGS=0, Tj=25°C

VDS=100V, VGS=0, Tj=150°C

V(BR)DSS 100

-

-V

VGS(th)

0.8

1.4

1.8

IDSS

µA

-

- 0.01

-

-

5

Gate-source leakage current

VGS=20V, VDS=0

Drain-source on-state resistance

VGS=2.8V, ID=15mA

Drain-source on-state resistance

VGS=4.5V, ID=0.3A

Drain-source on-state resistance

IGSS

-

-

10 nA

RDS(on)

-

14 30 Ω

RDS(on)

-

4.8 10

RDS(on)

-

3.5

6

VGS=10V, ID=0.37A

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

2003-02-26

Share Link: