1SS344 データシートの表示（PDF） - Toshiba
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1SS344 Datasheet PDF : 3 Pages
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TOSHIBA Diode Silicon Epitaxial Schottky Planar Type
1SS344
Ultra High Speed Switching Application
1SS344
Unit: mm
z Low forward voltage
: VF (3) = 0.50V (typ.)
z Fast reverse recovery time : trr = 20ns (typ.)
z High average forward current : IO = 0.5A (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
25
V
Reverse voltage
VR
20
V
Maximum (peak) forward current
IFM
1500
mA
Average forward current
IO
500
mA
Surge current (10ms)
IFSM
5
A
Power dissipation
P
200
mW
Junction temperature
Tj
125
°C
Storage temperature
Operating Temperature
Tstg
−55~125
°C
JEDEC
Topr
−40~100
°C
EIAJ
TD-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-3G1B
temperature/current/voltage and the significant change in
Weight: 0.012g
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 10mA
― IF = 100mA
― IF = 500mA
― VR = 10V
― VR = 20V
― VR = 0, f = 1MHz
― IF = 50mA, (Fig.1)
Min Typ. Max Unit
― 0.30 ―
― 0.38 ―
V
― 0.50 0.55
―
―
20
μA
―
― 100
― 120 ―
pF
―
20
―
ns
1
2007-11-01
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