GP10NB60SD データシートの表示（PDF） - STMicroelectronics

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GP10NB60SD

N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH™ IGBT

STMicroelectronics 

STGP10NB60SD

2 Electrical characteristics

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 3. Static

Symbol

Parameter

Test Conditions

Min.

VBR(CES)

Collector-Emitter Breakdown

Voltage

IC= 250µA, VGE= 0

600

VBR(CES)

Collector-Emitter Breakdown

Voltage

IC= 1mA, VGE= 0

20

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE= 15V, IC= 5A

VGE= 15V, IC= 10A

VGE=15V, IC= 10A, Tc= 125°C

VGE(th) Gate Threshold Voltage

VCE= VGE, IC= 250µA

2.5

ICES

Collector cut-off Current

(VGE = 0)

VCE= Max Rating,TC= 25°C

VCE=Max Rating,TC= 125°C

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE= ±20V , VCE= 0

gfs

Forward Transconductance VCE = 25V, IC= 10A

5

Typ. Max.

1.15

1.35

1.7

1.25

5

10

100

±100

Unit

V

V

V

V

V

V

µA

µA

nA

S

Table 4. Dynamic

Symbol

Parameter

Test Conditions

Min.

Cies

Coes

Cres

Qg

ICL

Input Capacitance

Output Capacitance

VCE = 25V, f = 1MHz, VGE = 0

Reverse Transfer Capacitance

Total Gate Charge

Latching Current

VCE = 400V, IC = 5A,

VGE = 15V, (see Figure 17)

Vclamp=480V, RG=1kΩ

20

Tj=125°C

Typ.

610

65

12

Max. Unit

pF

pF

pF

33

nC

A

3/12

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