BFR520 データシートの表示（PDF） - New Jersey Semiconductor
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BFR520 Datasheet PDF : 2 Pages
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Silicon NPN RF Transistor
BFR520
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO
Collector Cutoff Current
VCB= 6V; IE= 0
hFE
DC Current Gain
lc= 20mA ; VCe= 6V
fi
Current-Gain—Bandwidth Product lc= 20mA ; VCE= 6V; f= 1GHz
COB
Output Capacitance
IE= 0 ; VGB= 6V; f= 1 MHz
PG
Power Gain
lc= 20mA ; VCE= 6V; f= 900MHz
PG
Power Gain
lc= 20mA ; VCE= 6V; f= 2GHz
1 S21e I 2 Insertion Power Gain
lc= 20mA ; VCE= 6V; f= 900MHz
NF
Noise Figure
lc= 5mA ; VCE= 6V; f= 900MHz
NF
Noise Figure
lc= 20mA ; VCE= 6V; f= 900MHz
0.05
nA
60
250
9
GHz
0.5
PF
15
dB
9
dB
13
14
dB
1.1
1.6
dB
1.6
2.1
dB
400
Ptot
(mWj
300
200
100
\0 100
Power derating curve
250
200
150T1S5(0C'C)200
VCE=6V
100
50
0"-^
10 lc(mA)102
DC current gain as a function of collector
current
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