BSS63 データシートの表示（PDF） - Infineon Technologies

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BSS63

PNP Silicon AF an Swiching Transistors

Infineon Technologies 

BCX42, BSS63

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

BSS63

BCX42

V(BR)CEO

100 -

125 -

V

-

-

Collector-base breakdown voltage

V(BR)CBO

IC = 100 µA, IB = 0

BSS63

110 -

-

BCX42

125 -

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector cutoff current

VCB = 80 V, IE = 0

VCB = 100 V, IE = 0

Collector cutoff current

VCB = 80 V, IE = 0 , TA = 150 °C

VCB = 100 V, IE = 0 , TA = 150 °C

BSS63

BCX42

BSS63

BCX42

V(BR)EBO 5

ICBO

-

-

ICBO

-

-

-

-

nA

-

100

-

100

µA

-

20

-

20

Emitter cutoff current

VEB = 4 V, IC = 0

Collector cutoff current

VCE = 100 V, TA = 85 °C

VCE = 100 V, TA = 125 °C

BCX42

BCX42

IEBO

ICEO

-

-

100 nA

µA

-

-

10

-

-

75

DC current gain 1)

IC = 100 µA, VCE = 1 V

IC = 10 mA, VCE = 5 V

IC = 20 mA, VCE = 5 V

IC = 100 mA, VCE = 1 V

IC = 200 mA, VCE = 1 V

hFE

BCX42

BSS63

BSS63

BCX42

BCX42

25

-

30

-

30

-

63

-

40

-

-

-

-

-

-

-

1) Pulse test: t ≤ 300µs, D = 2%

2

Jul-10-2001

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