UAA3522 データシートの表示（PDF） - Philips Electronics
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UAA3522 Datasheet PDF : 28 Pages
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Philips Semiconductors
Low power dual-band GSM transceiver
with an image rejecting front-end
Objective specification
UAA3522HL
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
Ri(pin)
Ci(pin)
Pi
S11
LOL
input resistance per pin note 13
input capacitance per
pin
input power
symmetrical
single-ended
input power matching note 1
reverse isolation local
oscillator leakage
−
100 −
−
1−
−14.5 −10 −5.5
−11.5 −7 −2.5
−
−15 −10
−
− −40
Ω
pF
dBm
dBm
dB
dBm
OFFSET MIXER; DCS BAND (PINS TXIRFA AND TXIRFB)
fi(RF)(TX)
Ri(pin)
Ci(pin)
Pi
S11
LOL
TX RF VCO input
frequency
input resistance per pin note 13
input capacitance per
pin
input power
symmetrical
single-ended
input power matching note 1
reverse isolation local
oscillator leakage
1710 − 1785
−
100 −
−
1−
−14.5 −10 −5.5
−11.5 −7 −2.5
−
−15 −10
−
− −40
MHz
Ω
pF
dBm
dBm
dB
dBm
PHASE DETECTOR; DCS AND GSM BAND (PIN PHDOUT)
Icp(max)
charge pump maximum R = 270 Ω, 1%; VO = 1⁄2VCCPHD
2.2
sink or source current
GPHD
phase detector gain
−
∆GPHD
phase detector gain
VO = 1⁄2VCCPHD; note 11
−20
variation
VO
output voltage
0.5
Ro
output resistance
VO = 1⁄2VCCPHD
−
No
output noise current
20 kHz < foffset < 20 MHz in lock;
−
density
note 1
Isweep
VCO sweeping source VO = 1⁄2VCCPHD
0.4
current
Ro(off)
output resistance to TX mode disabled
−
ground when powered
down
SPUR4fm
SPUR8fm
level of spurious signal fmod = 67.7 kHz;
−
at four times the
fo(RF)(GSM) = 880 MHz
wanted fmod signal
to 915 MHz; fo(RF)(DCS) = 1710 MHz
level of spurious signal to 1785 MHz
−
at eight times the
wanted fmod signal
LOout
local oscillator
at fRF
−
feedthrough level
IMo
image level
at fRF; note 1
−
2.4 2.6
mA
2−
− +20
mA/rad
%
−
VCCPHD − 0.5 V
10 −
kΩ
− 200
pA/√Hz
0.55 0.7
mA
1−
kΩ
− −48
dBc
− −55
dBc
−40 −32
dBc
−38 −35
dBc
2000 Feb 18
16
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