ACE2341BBM-H データシートの表示（PDF） - ACE Technology Co., LTD.

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ACE2341BBM-H

P-Channel Enhancement Mode Field Effect Transistor

ACE Technology Co., LTD. 

ACE2341B

P-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics

TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

State

Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -20

Zero Gate Voltage Drain Current

IDSS

VDS=-16V, VGS=0V

Gate Leakage Current

IGSS

VGS=±12V, VDS=0V

V

-1 uA

±100 nA

Static Drain-Source On-Resistance RDS(ON)

VGS=-4.5V, ID=-4.3A

VGS=-2.5V, ID=-2.5A

55

65

70

85 mΩ

Gate Threshold Voltage

Forward Transconductance

Drain Forward Voltage

VGS=-1.8V, ID=-2A

112 125

VGS(th) VDS=VGS, ID=-250uA -0.6 -0.81 -1.4

V

gFS

VDS=-5V, ID=-4A

15

S

VSD

IS=-1.7A,VGS=0V

-0.85 -1

V

Switching

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Qg

Qgs

Qgd

Td(on)

tf

td(off)

tf

VDS=-10V, ID=-4.5A

VGS=-4.5V

VDS=-10V,RL=10Ω

ID=-1A, RGEN=6Ω

VGS=-4.5V

Dynamic

8.92 11.6

1.8 2.34 nC

2.04 2.65

16.08 32.16

5.28 10.56

ns

37.6 75.2

7.28 14.5

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Ciss

Coss

VDS=-10V, VGS=0V

f=1MHz

Crss

800 960

131

pF

103

Note: 1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment

with TA=25°C. The value in any given application depends on the user's specific board design.

2. Repetitive rating, pulse width limited by junction temperature.

3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

VER 1.2 2

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