B826S データシートの表示（PDF） - Inchange Semiconductor

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B826S

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-6A;IB=-0.3A

ICBO

Collector cut-off current

VCB=-40V;IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-2V

hFE-2

DC current gain

IC=-5A ; VCE=-2V

fT

Transition frequency

IC=-1A ; VCE=-5V

Switching times

ton

Turn-on time

ts

Storage time

IC=5.0A ;IB1=- IB2=0.5A

tf

Fall time

‹ hFE-1 classifications

Q

R

S

70-140 100-200 140-280

Product Specification

2SB826

MIN TYP. MAX UNIT

-50

V

-60

V

-6

V

-0.5

V

-0.1

mA

-0.1

mA

70

280

30

10

MHz

0.2

μs

0.1

μs

0.4

μs

2

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