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BC846A-H データシートの表示(PDF) - Formosa Technology

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BC846A-H
Formosa
Formosa Technology Formosa
BC846A-H Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SMD NPN Transistor
BC846A/B-BC847A/B/C
Formosa MS
BC848A/B/C-BC849B/C-BC850B/C
General Purpose Transistors
NPN Silicon
Features
Moisture Sensitivity Level: 1
ESD Rating Human Body Model: >4000 V,Machine Model: >400 V
Epitaxial plana chip construction
• Ideal for medium power application and switching
As complementary type, the PNP transistor BC856A is
recommended.
Capable of 225mW power dissipation.
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free part, ex.BC846A-H.
Package outline
SOT-23
(B)
(C)
(A)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, SOT-23
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Mounting Position : Any
Weight : Approximated 0.008 gram
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.051 (1.30)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
Rating
Rating
Collector-Base voltage
BC846
BC847, BC850
BC848, BC849
Collector-Emitter voltage
BC846
BC847, BC850
BC848, BC849
Emitter-Base voltage
BC846
BC847, BC850
BC848, BC849
Collector current-Continuous
Thermal Characteristics
PARAMETER
Total device dissipation FR-5 board
(1)
TA = 25OC
Derate above 25OC
Thermal resistance
Total device dissipation Aluminum
substrate(2)
Junction to ambient
TA = 25OC
Derate above 25OC
Thermal resistance
Junction to ambient
Operating junction temperature range
Storage temperature range
1.FR-5 = 1.0 x 0.75 x0.062 in.
2. Aluminum=0.4 x 0.3 x 0.024 in., 99.5% aluminum
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Symbol
VCBO
VCEO
VEBO
IC
Value
80
50
30
65
45
30
6.0
6.0
5.0
100
UNIT
Vdc
Vdc
Vdc
mAdc
Symbol MIN. TYP. MAX. UNIT
PD
RθJA
PD
RθJA
TJ
-55
TSTG
-55
225 mW
1.8 mW/OC
556 OC/W
300 mW
2.4 mW/OC
417 OC/W
+150 oC
+150 oC
Document ID Issued Date
DS-231154
2009/08/10
Revised Date Revision
2011/07/21
C
Page.
9

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