DAN217U データシートの表示（PDF） - Willas Electronic Corp.

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DAN217U

SOT-323 Plastic-Encapsulate Diodes

Willas Electronic Corp. 

WILLAS

S1.0OATSU-3RF2A3CEPMlOaUsNtTicSC-EHOnTcTKaYpBsAuRRlaIEtReREDCiToIFdIEeRSs-20V- 200V

SOD-123+ PACKAGE

FM120-M+

DAN217TUHRU

FM1200-M+

Pb Free Product

Features

SWIT•CBHatIcNhGprocDeIsOs DdeEsign, excellent power dissipation offers

FEAT•ULbRoewEtteSprrroefvileerssuerlfeaackeamgoeucnutrerdenatpapnlidcathtieornmianlorredseisr ttaonce.

z Somptaimll iszeurbfoaacred smpaocuen. ting type

z ••THLwoiogwhdpciouowrdreeernletocsleaspm, aheibginhlittsey,ffaliocrwieefncocoryw.nanrdecvtoeltdagiendsreopri.es

z •PHbig-hFrseuergepacacpkaabgileityi.s available

••RUGolutHraarSdhripignrhgo-sfdopurecoetvdefosrvwroiptlctaahcginkeginp. rgotceocdtieons. uffix ”G”

•HSaililcoogneenpfirtaexeiapl rpoladnuacrtcfhoipr,pmaectkailnsgiliccoondjeunscutifofinx. “H”

z • MLeoaids-tfurereepSaertns smietievtietynvLireovnemle1ntal standards of

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

MAMRKeIcNhGa:An7ical data

• Epoxy : UL94-V0 rated flame retardant

Package outline

SOT-323

SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

1

3

2

0.040(1.0)

0.024(0.6)

• Case : Molded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

0.031(0.8) Typ.

0.031(0.8) Typ.

Method 2026

Maximum Ratings and

• Polarity : Indicated by

Electrical Characteristics,

cathode band

Single

Diode

@TaD=im2e5ns℃ions

in

inches

and

(millimeters)

• MountingPPaorsaitmioent:eAr ny

Symbol

Limit

Unit

• Weight : Approximated 0.011 gram

Peak reverse voltage

VRM

80

V

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RaDtinCgsreatv2e5r℃se avmolbtiaegntetemperature unless otherwise sVpeRcified.

80

V

Single phase half wave, 60Hz, resistive of inductive load.

ForMcaaxpaimcituivme lo(paed,adke)rfaoterwcuarrrdenct ubyrr2e0n%t

IFM

300

mA

Average forwardRAcTuIrNreGnSt

Marking Code

MaxSimuurmgeReccuurrrreennt tP(e1aμk sR)everse Voltage

Maximum RMS Voltag(e10ms)

Maximum DC Blocking Voltage

Power dissipation

Maximum Average Forward Rectified Current

mA SYMBOIOL FM120-MH FM130-MH FM140-MH FM1501-0M0H FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

12

13

14

15

16

18

10

115 120

VVRRMRIMSFSM

20

14

30

21

40

28

50400 60

351000 42

80

56

100

70

150

mA

105

200 Volts

140 Volts

VDC

20

IO PD

30

40

50

60

80

200

1.0

100

150

200 Volts

mW

Amps

PeakJuFonrwctairod nSutregemCpuerrreantt u8.r3ems single half sine-wave

superimposed on rated load (JEDEC method)

TypSicatol Trahegrematel Rmepsiestraantcuer(eNote 2)

Typical Junction Capacitance (Note 1)

OpeOraptinegraTteimngpetreatmurpe eRraantguere range

Storage Temperature Range

IFSMTj

RΘJTA stg

CJ

TJ Topr

TSTG

-55 to +125

150

30

℃

-55~+150 40

℃

120

-40~+100

-55 to +150

℃

- 65 to +175

Amps

℃/W

PF

℃

℃

CHARACTERISTICS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

Maximum Forward Voltage at 1.0A DC

VF

0.50

0.70

0.85

MaExiLmEumCATvRerIaCgeARLevCerHseACRurrAenCt aTtE@RTISA=T2I5C℃S

(Ta=25℃

IR

unless

otherwise

specified)

0.5

Rated DC Blocking Voltage

@T A=125℃

10

0.9

0.92 Volts

mAmps

NOTES:

Parameter

Symbol

Test conditions

Min

Max

Unit

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

Reverse breakdown voltage

V(BR)

IR= 100μA

80

V

2- Thermal Resistance From Junction to Ambient

Reverse voltage leakage current

IR

VR=70V

0.2

μA

Forward voltage

VF

IF=100mA

1200

mV

2012-06

2012-1

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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