BAS116 データシートの表示（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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BAS116 Datasheet PDF : 4 Pages
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BAS116
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
● Low leakage current applications
● Medium speed switching times
SOT- 23
3
Applications
● Extreme fast switches
Marking:
● JV
2
1
1
3
2
Parameter
Symbol
Limit
Unit
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
VRRM
VRWM
75
V
VR
IFM
200
mA
Non-Repetitive Peak Forward Surge Current @t=8.3ms
IFSM
2.0
A
Power Dissipation
PD
225
mW
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Diode capacitance
Symbol
V (BR)
VF1
VF2
VF3
VF4
IR
Ctot
Min
75
Typ Max Unit
V
0.9
V
1
V
1.1
V
1.25
V
5
nA
2
pF
Reverse recovery time
trr
3
μs
Conditions
IR=100μA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=75V
VR=0V,f=1MHz
IF=IR=10mA,Irr=0.1×IR ,
RL=100Ω
High Diode Semiconductor
1
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