MPSH11 データシートの表示（PDF） - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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MPSH11

TRANSISTOR (NPN)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

MPSH10/11

MPSH10/11 TRANSISTOR (NPN)

D FEATURES

Power dissipation

T PCM:

0.35 W (Tamb=25℃)

.,L Collector current

ICM:

0.05 A

Collector-base voltage

O V(BR)CBO:

30 V

Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

TO-92

1. BASE

2. EMITTER

3. COLLECTOR

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP MAX UNIT

N Collector-base breakdown voltage

V(BR)CBO

Ic= 100µA, IE=0

30

O Collector-emitter breakdown voltage

V(BR)CEO

Ic= 1mA, IB=0

25

Emitter-base breakdown voltage

V(BR)EBO

IE= 10µA, IC=0

3

R Collector cut-off current

ICBO

VCB= 25V, IE=0

T Collector cut-off current

ICEO

VCE= 20V, IB=0

C Emitter cut-off current

IEBO

VEB= 2V, IC=0

E DC current gain

hFE

VCE= 10V, IC= 4mA

60

L Collector-emitter saturation voltage

VCE(sat)

IC=4mA, IB=0.4mA

V

V

V

0.1

µA

0.2

µA

0.1

µA

200

0.5

V

E Collector-emitter voltage

WEJ Transition frequency

VBE(on)

VCE=10V, IC=4mA

VCE= 10V, IC=4mA

fT

650

f =100MHz

0.95

V

MHz

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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