DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MBRF10100CT データシートの表示(PDF) - Nell Semiconductor Co., Ltd

部品番号
コンポーネント説明
メーカー
MBRF10100CT Datasheet PDF : 5 Pages
1 2 3 4 5
SEMICONDUCTOR
MBR10100CT Series RRooHHSS
Nell Semiconductors
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward voltage (1)
IF = 5A
IF = 5A
TC = 25°C
VF
TC = 125°C
Maximum reverse current at working peak
reverse voltage(2)
TJ = 25°C
IR
TJ = 100°C
Notes
(1) Pulse test : 300μs pulse width, 1% duty cycle
(2) Pulse test : Pulse width ≤ 40 ms
VALUE
0.85
0.75
100
6
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
PARAMETER
SYMBOL MBR10100CT MBRF10100CT MBRH10100CT
Typical thermal resistance (junction-ambient)
RΘJA
60
-
60
Typical thermal resistance (junction-case)
RΘJC
4.4
7.5
4.4
Approximate weight
2
2.5
2
UNIT
°C/W
g
Ordering Information Table
Device code MBR F 10 100 CT
1
2
3
4
5
1 - Schottky MBR series
2 - Package outline, none for TO-220AB
"F" for ITO-220AB (TO-220F)
"H" for TO-263AB (D2PAK)
3 - Current rating, 10 = 10A, 5Ax2
4 - Voltage rating, 100 = 100V
5 - Circuit configuration, Center tap common
Cathode, TO-220 series package
www.nellsemi.com
Page 2 of 5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]