1N5822 データシートの表示（PDF） - Cystech Electonics Corp.

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1N5822

3.0Amp. Axial Leaded Schottky Barrier Diodes

Cystech Electonics Corp. 

CYStech Electronics Corp.

3.0Amp. Axial Leaded Schottky Barrier Diodes

1N582XLA Series

Spec. No. : C330LA

Issued Date : 2003.04.16

Revised Date :

Page No. : 1/3

Features

• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

• Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0

• Low leakage current

• High surge capability

• High temperature soldering: 250°C/10 seconds at terminals

• High reliability

Mechanical Data

• Case: DO-201AD molded plastic.

• Terminals: Axial leads, solderable per MIL-STD-202 method 208

• Polarity: Indicated by cathode band.

• Weight: 1.10 gram

Maximum Ratings and Electrical Characteristics

(Rating at 25°C ambient temperature unless otherwise noted. Single phase, half wave, 60Hz, resistive or

inductive load. )

Parameter

Conditions

Type

Symbol 1N5820 1N5821 1N5822 Units

min typ max

Repetitive peak reverse

voltage

VRRM 20 30 40 V

Maximum RMS voltage

Maximum DC blocking

voltage

VRMS 14 21 28 V

VR 20 30 40 V

Maximum instantaneous

forward voltage

IF=3A (Note 1)

VF 0.475 0.500 0.525 V

Maximum average forward

rectified current

IO

3

A

Peak forward surge current

Maximum DC reverse

current

Maximum thermal

resistance

Diode junction capacitance

Storage temperature

8.3ms single half sine wave superimposed

on rated load(JEDEC method)

VR=VRRM,TA=25℃(Note 1)

VR=VRRM,TA=125℃(Note 1)

Junction to ambient(Note 2)

f=1MHz and applied 4V reverse voltage

IFSM

IR

Rth,JA

CJ

Tstg

80

2

20

40

250

-65~+125

A

mA

mA

℃/w

pF

℃

Operating temperature

TJ

-65~+125

℃

Notes: 1.Pulse test, pulse width=300μsec, 2% duty cycle

1N582XLA

CYStek Product Specification

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