BTS555 データシートの表示（PDF） - Siemens AG
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BTS555 Datasheet PDF : 15 Pages
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Target Data Sheet BTS555
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC7)
junction - ambient (free air): RthJA
Values
Unit
min typ max
--
-- 0.40 K/W
-- 30
--
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,5, see measurement
circuit page 8)
IL = tbd (>=20) A, Tj = 25 °C: RON
VIN = 0, IL = tbd (>=20) A, Tj = 150 °C:
IL = tbd A, Tj = 150 °C:
Vbb = tbd V8), IL = tbd A, Tj = 150 °C:
Nominal load current9) (Tab to pins 1,5)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10)
Maximum load current in resistive range
(Tab to pins 1,5)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 13 VON = 1.8 V, Tc = 150 °C:
Turn-on time11)
IIN to 90% VOUT:
Turn-off time
IIN to 10% VOUT:
RL = 1 Ω , Tj =-40...+150°C
Slew rate on 11) (10 to 30% VOUT )
RL = 1 Ω
Slew rate off 11) (70 to 40% VOUT )
RL = 1 Ω
RON(Static)
IL(ISO)
IL(Max)
ton
toff
dV/dton
-dV/dtoff
-- 2.4
4.6
tbd
-- tbd
111 132
2.9 mΩ
5.7
tbd
tbd
-- A
tbd
--
--
tbd
--
-- A
130
-- 550 µs
60
-- 240
-- 0.8
-- V/µs
-- 0.8
-- V/µs
Inverse Load Current Operation
On-state resistance (Pins 1,5 to pin 3)
VbIN = 12 V, IL = - tbd (>=20) A
Tj = 25 °C:
see diagram on page 10
Tj = 150 °C:
Nominal inverse load current (Pins 1,5 to Tab)
VON = -0.5 V, Tc = 85 °C10
Drain-source diode voltage (Vout > Vbb)
IL = - tbd (>=20) A, IIN = 0, Tj = +150°C
RON(inv)
IL(inv)
-VON
-- 2.4
4.6
111 132
2.9 mΩ
5.7
-- A
-- tbd
-- mV
7) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included!
8) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
9) Not tested, specified by design.
10) TJ is about 105°C under these conditions.
11) See timing diagram on page 14.
Semiconductor Group
Page 3
1998-Jan-14
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