BTS555 データシートの表示（PDF） - Siemens AG

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BTS555

Smart Highside High Current Power Switch

Siemens AG 

Target Data Sheet BTS555

the inductive load, but higher peak power dissipation in Vbb disconnect with energized inductive

the PROFET.

load

Overvoltage protection of logic part

+ Vbb

R IN

IN

V Z,IN

V

Z,IS

R bb

Logic

VOUT

Provide a current path with load current capability by

using a diode, a Z-diode, or a varistor. (VZL < 72 V or

VZb < 30 V if RIN=0). For higher clamp voltages

currents at IN and IS have to be limited to 250 mA.

Version a:

Vbb

V bb

IS

PROFET

IN PROFET OUT

RIS

RV

V Z,VIS

Signal GND

Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ

nominal. Note that when overvoltage exceeds 71V typ.

a voltage above 5V can occur between IS and GND, if

RV, VZ,VIS are not used.

Version b:

IS

VZL

Reverse battery protection

-Vbb

Rbb

IN

RIN

Logic

OUT

Power

Transistor

IS

DS

D

RIS

RV

Signal GND

RL

Power GND

RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse

battery protection in applications with Vbb above

16

V16);

recommended

value:

1

RIN

+

1

RIS

+

1

RV

=

0.1A

1

0.1A

|Vbb| - 12V if DS is not used (or RIN = |Vbb| - 12V if DS

is used).

To minimize power dissipation at reverse battery

operation, the summarized current into the IN and IS

pin should be about 120mA. The current can be

provided by using a small signal diode D in parallel to

the input switch, by using a MOSFET input switch or

by proper adjusting the current through RIS and RV.

Vbb

VZb

Vbb

IN PROFET OUT

IS

Note that there is no reverse battery protection when

using a diode without additional Z-diode VZL, VZb.

Version c: Sometimes a neccessary voltage clamp is

given by non inductive loads RL connected to the

same switch and eliminates the need of clamping

circuit:

Vbb

Vbb

RL

IN PROFET OUT

IS

Semiconductor Group

Page 8

1998-Jan-14

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