MGF7170AC データシートの表示（PDF） - MITSUBISHI ELECTRIC

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MGF7170AC

UHF BAND GaAs POWER AMPLIFIER

MITSUBISHI ELECTRIC  

Preliminary

information

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

MGF7170AC

UHF BAND GaAs POWER AMPLIFIER

ABSOLUTE MAXIMUM RATINGS (Ta=25 deg.C )

Symbol

Parameter

Ratings Unit

Vd1,Vd2 Drain supply voltage

Vg

Gate supply voltage

Pi

Input power

6

V

4

V

15

dBm

Tc(op) Operating case temperature -30 ~ +85 deg.C

Tstg

Storage temperature

-30 ~ +100 deg.C

*1.Each maximum rating is guaranteed independently.

ELECTRICAL CHARACTERISTICS (Ta=25 deg.C )

Symbol

Parameter

f

frequency

Test conditions

Limits

Unit

MIN TYP MAX

1715 – 1780 MHz

Idt

Total drain current

Idle_Id Idle current

Pout

Ig

2sp

rin

Output power

Gate current

2nd harmonics

input VSWR

–

Damage

with-standing

Note

–

Stability

Note

ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V

ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V

ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V

ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V

Vg=2.6V, Po=28dBm

Vg=2.9V, Po=12dBm

Vd1=Vd2=3.0V,Vg=2.6V,

Pin=7dBm CDMA modulated signal

based on IS-95 STD.

(1.2288Mbps spreading,OQPSK)

Vd1=Vd2=3.0V,

Pin=7dBm,

Load VSWR=10, All phase

Time=10 sec

Vd1=Vd2=3.0V,

Pin=7dBm,

Load VSWR=3:1, All phase

–

450

–

–

480

–

mA

– 520 –

–

450

–

– 150 –

–

50

– mA

– 28 – dBm

– 10 – mA

–

– -30 dBc

– – 3–

No damage

No oscillation

Spurious level ≤-60dBc

*CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying.

Electrical characteristics are changed by the external matching circuit.

Limits are guaranteed by using MITSUBISHI test fixture.

Note : Sampling inspection

MITSUBISHI ELECTRIC

(2/16)

Aug. '97

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