BFR92AW
Silicon NPN Planar RF Transistor
Applications
Wide band amplifier up to GHz range.
Electrostatic sensitive device.
Observe precautions for handling.
Features
D High power gain
D Low noise figure
D High transition frequency
1
13 652
23
13 570
Marking: WP2
Plastic case (SOT 323)
1= Collector; 2= Base; 3= Emitter
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation Tamb ≤ 60°C
Junction temperature
Storage temperature range
Maximum Thermal Resistance
Parameters
Junction ambient on glass fibre printed board
(25 x 20 x 1.5) mm3 plated with 35 mm Cu
Symbol
Value
Unit
VCBO
20
V
VCEO
15
V
VEBO
2
V
IC
30
mA
Ptot
200
mW
Tj
150
°C
Tstg
–65 to +150
°C
Symbol
RthJA
Value
450
Unit
K/W
TELEFUNKEN Semiconductors
1 (8)
Rev. A2, 07-Nov-97
Preliminary Specifications