BD242 データシートの表示（PDF） - Bourns, Inc

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コンポーネント説明

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BD242

PNP SILICON POWER TRANSISTORS

Bourns, Inc 

BD242, BD242A, BD242B, BD242C

PNP SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

1000

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS632AH

VCE = -4 V

tp = 300 µs, duty cycle < 2%

TC = 25°C

TC = 80°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

TCS632AB

-10

100

10

-0·01

-0·1

-1·0

IC - Collector Current - A

Figure 1.

-1·0

-0·1

IC = -100 mA

IC = -300 mA

IC = -1 A

IC = -3 A

-0·01

-10

-0·1

-1·0

-10

-100

-1000

IB - Base Current - mA

Figure 2.

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

TCS632AC

-1

VCE = -4 V

TC = 25°C

-0·9

-0·8

-0·7

-0·6

-0·5

-0·01

-0·1

-1

-10

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

3

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