IRFW520A データシートの表示（PDF） - Fairchild Semiconductor
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IRFW520A Datasheet PDF : 7 Pages
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IRFW/I520A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
∆BV/ ∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
Test Condition
100 -- --
-- 0.12 --
2.0 -- 4.0
V VGS=0V,ID=250 µA
V/ΟC ID=250µA See Fig 7
V VDS=5V,ID=250 µA
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
-- -- 10
VDS=100V
--
-- 100 µ A VDS=80V,TC=150ΟC
-- -- 0.2 Ω VGS=10V,ID=4.6A
O4
-- 6.35 --
Ω VDS=40V,ID=4.6A
O4
-- 370 480
-- 95 110 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 38 45
-- 14 40
-- 14 40
VDD=50V,ID=9.2A,
-- 36 90 ns RG=18Ω
See Fig 13
-- 28 70
O4 O5
-- 16 22
VDS=80V,VGS=10V,
-- 2.7 -- nC ID=9.2A
-- 7.8 --
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 9.2
Integral reverse pn-diode
A
-- 37
in the MOSFET
O4 -- -- 1.5 V TJ=25ΟC,IS=9.2A,VGS=0V
-- 98 -- ns TJ=25ΟC ,IF=9.2A
-- 0.34 -- µ C diF/dt=100A/ µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=2mH, IAS=9.2A, VDD=25V, RG=27Ω , Starting TJ =25oC
O3 ISD <_ 9.2A, di/dt <_ 300A/µs, VDD <_ BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature
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