BCX 68
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 30 mA
Collector-base breakdown voltage
IC = 10 µA
Emitter-base breakdown voltage
IE = 1 µA
Collector cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
Emitter cutoff current
VEB = 5 V
DC current gain1)
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V
IC = 1 A, VCE = 1 V
BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA
Base-emitter voltage1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
AC characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 20 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 20
–
–
V
V(BR)CB0 25
–
–
V(BR)EB0 5
–
–
ICB0
–
–
100 nA
–
–
100 µA
IEB0
–
–
10
µA
hFE
VCEsat
–
50
–
–
85
–
375
85
100 160
100 160 250
160 250 375
60
–
–
–
–
0.5 V
VBE
–
0.6 –
–
–
1
fT
–
100 –
MHz
1) Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2