2SD1047E データシートの表示（PDF） - Inchange Semiconductor
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2SD1047E Datasheet PDF : 2 Pages
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isc Silicon NPN Power Transistor
isc Product Specification
2SD1047E
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; RBE= ∞
140
V
V(BR)CBO Collector-Base Breakdown Voltage
IC=5mA; IE= 0
160
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
0.6 2.5
V
VBE(on) Base -Emitter On Voltage
IC= 1A ; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 80V ; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
100
200
hFE-2
DC Current Gain
IC= 6A ; VCE= 5V
20
COB
Output Capacitance
IE= 0;VCB= 10V;ftest= 1.0MHz
210
pF
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
15
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 1A ,RL= 20Ω,
IB1= IB2= 0.1A,VCC= 20V
0.26
μs
6.88
μs
0.68
μs
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