STPS1150A_04 データシートの表示（PDF） - STMicroelectronics
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STPS1150A_04 Datasheet PDF : 6 Pages
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STPS1150
Table 4: Thermal Resistance
Symbol
Parameter
Rth(j-l) Junction to lead
Lead length = 10 mm
SMA
DO-41
Value
20
30
Table 5: Static Electrical Characteristics
Symbol
Parameter
Tests conditions
IR *
Reverse leakage current Tj = 25°C
Tj = 125°C
VR = VRRM
VF * Forward voltage drop
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 1A
IF = 2A
Min. Typ
0.2
0.2
0.78
0.62
0.85
0.69
Pulse test:
* tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.59 x IF(AV) + 0.08 IF2(RMS)
Max.
1
1
0.82
0.67
0.89
0.75
Unit
°C/W
Unit
µA
mA
V
Figure 1: Average forward power dissipation
versus average forward current
PF(AV)(W)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.2
δ = 0.05
δ = 0.1 δ = 0.2 δ = 0.5
δ=1
IF(AV)(A)
0.4
0.6
0.8
T
δ=tp/T
1.0
tp
1.2
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
IF(AV)(A)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
T
δ=tp/T
25
tp
50
Rth(j-a)=Rth(j-I)
Rth(j-a)=120°C/W
SMA
DO-41
Tamb(°C)
75
100
125
150
175
Figure 3: Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
100
1000
Figure 4: Normalized avalanche power
derating versus junction temperature
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
25
50
Tj(°C)
75
100
125
150
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