STPS1150
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMA)
IM(A)
8
7
6
5
4
3
2
IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
SMA
Ta=25°C
Ta=75°C
Ta=125°C
1.E+00
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values) (DO-41)
IM(A)
8
7
6
5
4
3
2
IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
DO-41
Ta=25°C
Ta=75°C
Ta=125°C
1.E+00
Figure 7: Relative variation of thermal
impedance junction to ambient versus pulse
duration (epoxy printed circuit board,
e(Cu)=35µm, recommended pad layout) (SMA)
Zth(j-c)/Rth(j-c)
1.0
SMA
0.9
0.8
0.7
0.6 δ = 0.5
0.5
0.4
0.3 δ = 0.2
0.2 δ = 0.1
0.1
0.0
1.E-02
Single pulse
1.E-01
tp(s)
1.E+00
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Figure 8: Relative variation of thermal
impedance junction to ambient versus pulse
duration (DO-41)
Zth(j-c)/Rth(j-c)
1.0
DO-41
0.9
0.8
0.7
0.6 δ = 0.5
0.5
0.4
0.3 δ = 0.2
0.2 δ = 0.1
0.1
0.0
1.E-02
Single pulse
1.E-01
tp(s)
1.E+00
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Figure 9: Reverse leakage current versus
reverse voltage applied (typical values)
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
0
25
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
50
75
100
125
150
Figure 10: Junction capacitance versus
reverse voltage applied (typical values)
C(nF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
10
VR(V)
1
1
10
100
1000
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