BDW24A データシートの表示（PDF） - Inchange Semiconductor
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BDW24A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDW24/A/B/C
DESCRIPTION
·Collector Current -IC= -6A
·High DC Current Gain-hFE= 750(Min)@ IC= -2A
·Complement to Type BDW23/A/B/C
APPLICATIONS
·Designed for hammer drivers, audio amplifiers applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW24
-45
BDW24A
-60
VCER
Collector-Emitter
Voltage
V
BDW24B
-80
BDW24C
-100
BDW24
-45
BDW24A
-60
VCEO
Collector-Emitter
Voltage
V
BDW24B
-80
BDW24C
-100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
-8
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-0.2
A
50
W
150
℃
-65~150 ℃
isc Website：www.iscsemi.cn
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