SD1127 データシートの表示（PDF） - Advanced Semiconductor
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SD1127 Datasheet PDF : 1 Pages
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SD1127
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1127 is designed for VHF
mobil communications applications up
to 175 MHz.
FEATURES:
• Grounded Emiter The ASI SD1127
• Gp 12 dB @ 12.5V 175 MHz
• Pout 4.0 V Min.
PACKAGE STYLE TO-39
MAXIMUM RATINGS
IC
0.64A
VCB
36 V
VCE
18 V
PDISS
8 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC
21.9 °C/W
1 = COLLECTOR 2 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 10 mA
BVCES
IC = 5 mA
BVEBO
IC = 1.0 mA
ICBO
VCE = 15 V
HFE
VCE = 5.0 V
IC = 50 mA
COB
VCE = 15 V
f = 1.0 MHz
GPE
VCE = 12.5 V
f = 175 MHz
η
VCE = 12.5 V PPUT = 4.0 W f = 175 MHz
IMPEDANCE
VCC = 12.6 V
VCC = 12.6 V
VCC = 12.6 V
PIN = 0.2 W
PIN = 0.2 W
PIN = 0.2 W
f = 136 MHZ
f = 155 MHZ
f = 175 MHZ
MINIMUM
18
36
4.0
10
TRANS1.SYM
TYPICAL MAXIMUM
.25
100
20
12
ZIN = 3.0 – j3.8
ZIN = 4.0 – j2.0
ZIN = 4.3 – j5.8
ZCL = 12.8 – j11
ZCL = 11 – j14.8
ZCL = 13 – j20
UNITS
V
V
V
mA
---
pf
dB
Ω
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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