FGH20N60SFD データシートの表示（PDF） - Fairchild Semiconductor

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FGH20N60SFD

600 V, 20 A Field Stop IGBT

Fairchild Semiconductor 

FGH20N60SFD

600 V, 20 A Field Stop IGBT

Features

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20A

• High Input Impedance

• Fast Switching

• RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, PFC

April 2013

General Description

Using novel field stop IGBT technology, Fairchild®’s field stop

IGBTs offer the optimum performance for solar inverter, UPS,

welder and PFC applications where low conduction and switch-

ing losses are essential.

E

C

G

COLLECTOR

(FLANGE)

Absolute Maximum Ratings

Symbol

VCES

VGES

IC

ICM (1)

PD

TJ

Tstg

TL

Description

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current

Collector Current

Pulsed Collector Current

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction Temperature

@ TC = 25oC

@ TC = 100oC

@ TC = 25oC

@ TC = 25oC

@ TC = 100oC

Storage Temperature Range

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

RJC(IGBT)

RJC(Diode)

RJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

C

G

E

Ratings

600

 20

40

20

60

165

66

-55 to +150

-55 to +150

300

Typ.

-

-

-

Max.

0.76

2.51

40

Unit

V

V

A

A

A

W

W

oC

oC

oC

Unit

oC/W

oC/W

oC/W

©2008 Fairchild Semiconductor Corporation

1

FGH20N60SFD Rev. C0

www.fairchildsemi.com

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