PNP Epitaxial Planar Silicon Transistor
Production specification
2SA1700
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
UNIT
Collector-base breakdown voltage VCBO
Collector-emitter breakdown voltage VCEO
Emitter-base breakdown voltage
VEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
IC=-10uA,IE=0
IC=-1mA,IB=0
IE=-10uA,IC=0
VCB=-300V,IE=0
VEBO=-4V,IC=0
VCE=-10V,IC=-50mA
IC=-50mA,IB=-5mA
-400
-400
-5
60
V
V
-100 nA
-100 nA
200
-0.8 V
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Reverse transfer capacitance
Turn-ON Time
Turn-OFF Time
VBE(sat)
fT
Cob
Cre
ton
toff
IC=-50mA,IB=-5mA
VCE=-30V,IC=-10mA
VCB=-30V,f=1MHz
VCB=-30V,f=1MHz
-1.0
70
5
4
0.25
5
V
MHz
pF
pF
μs
μs
CLASSIFICATION OF hFE(1)
Rank
Range
D
60-120
E
100-200
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
V/(W)005
Rev.A
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